收藏本站
A Product Line of
Diodes Incorporated
DMP21D0UFB4
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Footprint of just 0.6mm – thirteen times smaller than SOT23
V (BR)DSS
-20V
R DS(on)
495m Ω @ V GS = -4.5V
690m Ω @ V GS = -2.5V
960m Ω @ V GS = -1.8V
I D @ T A = 25 ° C
-0.77A
-0.67A
-0.57A
?
?
?
?
?
?
?
2
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
ESD Protected Gate 3KV
?
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
? Case: X2-DFN1006-3
? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
? Moisture Sensitivity: Level 1 per J-STD-020
?
Portable electronics
?
?
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
D
S
G
Gate
Gate
Source
ESD PROTECTED TO 3kV
Bottom View
Top View
Internal Schematic
Protection
Diode
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB4-7B
Marking
NO
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP21D0UFB4-7B
NO
Top View
Bar Denotes Gate
and Source Side
NO = Product Type Marking Code
DMP21D0UFB4
D atasheet number: DS35279 Rev. 3 - 2
1 of 7
www.diodes.com
February 2012
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMP21D0UFD-7 MOS P CH 20V 1.14A X1-DFN1212-3
DMP21D0UT-7 MOSFET P CH 20V 590A SOT523
DMP21D5UFB4-7B MOSF P CH 20V 700MA X2-DFN1006-3
DMP2215L-7 MOSFET P-CH 20V 2.7A SOT23-3
DMP2225L-7 MOSFET P-CH 20V 2.6A SOT23-3
DMP2240UDM-7 MOSFET P-CH DUAL 20V 2A SOT-26
DMP2240UW-7 MOSFET P-CH 20V 1.5A SC70-3
DMP22D4UFA-7B MOSFET P CH 20V 330MA
相关代理商/技术参数
DMP21D0UFB-7 功能描述:MOSFET MOSFET P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D0UFB-7B 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP21D0UFD 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP21D0UFD-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D0UT-7 功能描述:MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D2UFA-7B 功能描述:MOSFET P-CH 20V 0.33A X2DFN-3 制造商:diodes incorporated 系列:- 包装:剪切带（CT） 零件状态:在售 FET 类型:P 沟道 技术:MOSFET（金属氧化物） 漏源电压（Vdss）:20V 电流 - 连续漏极（Id）（25°C 时）:330mA（Ta） 驱动电压（最大 Rds On，最小 Rds On）:1.5V，4.5V 不同 Id 时的 Vgs（th）（最大值）:1V @ 250μA 不同 Vgs 时的栅极电荷?（Qg）（最大值）:0.8nC @ 4.5V Vgs（最大值）:±8V 不同 Vds 时的输入电容（Ciss）（最大值）:49pF @ 15V FET 功能:- 功率耗散（最大值）:360mW（Ta） 不同?Id，Vgs 时的?Rds On（最大值）:1 欧姆 @ 200mA，4.5V 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 供应商器件封装:X2-DFN0806-3 封装/外壳:3-XFDFN 标准包装:1
DMP21D5UFB4-7B 功能描述:MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 10K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP21D5UFD-7 功能描述:MOSFET P-Ch Enh Mode FET 1.0Ohm -20V -600mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube